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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2344 DESCRIPTION *With TO-220 package *Complement to type 2SA1011 APPLICATIONS *High voltage switching *Audio frequency power amplifier; *100W output predriver applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 180 160 6 1.5 3.0 25 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Base-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA ,RBE=: IC=1mA; IE=0 IE=1mA; IC=0 IC=0.5A; IB=50mA IC=10mA ; VCE=5V VCB=120V; IE=0 VEB=4V; IC=0 IC=0.3A ; VCE=5V IC=50mA ; VCE=10V f=1MHz ; VCB=10V 60 MIN 160 180 6 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE fT Cob 2SC2344 TYP. MAX UNIT V V V 0.3 1.5 10 10 200 100 23 V V A A MHz pF Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=0.5A IB1=- IB2=50mA 0.15 0.81 0.48 s s s hFE Classifications D 60-120 E 100-200 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2344 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2344 4 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2344 5 |
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